document number: 94046 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 22-feb-10 1 hexfred ? ultrafast soft recovery diode, 8 a vs-HFA08TB120SPBF vishay high power products features ? ultrafast recovery ? ultrasoft recovery ? very low i rrm ? very low q rr ? specified at operating conditions ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? halogen-free according to iec 61249-2-21 definition ? compliant to rohs directive 2002/95/ec ? aec-q101 qualified benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa08tb120s is a state of the art ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any re ctifier previously available. with basic ratings of 1200 v and 8 a continuous current, the vs-hfa08tb120s is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfre d features combine to offer designers a rectifier with lowe r noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snu bbing, component count and heatsink sizes. the hexfred vs-hfa08tb120s is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applicatio ns where high speed, high efficiency is needed. product summary v r 1200 v v f at 8 a at 25 c 3.3 v i f(av) 8 a t rr (typical) 28 ns t j (maximum) 150 c q rr (typical) 140 nc di (rec)m /dt (typical) at 125 c 85 a/s i rrm (typical) 4.5 a d 2 pak base catho d e ano d e 1 3 2 n/c absolute maximum ratings parameter symbol test co nditions values units cathode to anode voltage v r 1200 v maximum continuous forward current i f t c = 100 c 8 a single pulse forward current i fsm 130 maximum repetitive forward current i frm 32 maximum power dissipation p d t c = 25 c 73.5 w t c = 100 c 29 operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94046 2 revision: 22-feb-10 vs-HFA08TB120SPBF vishay high power products hexfred ? ultrafast soft recovery diode, 8 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 8.0 a - 2.6 3.3 i f = 16 a - 3.4 4.3 i f = 8.0 a, t j = 125 c - 2.4 3.1 maximum reverse leakage current i rm v r = v r rated t j = 125 c, v r = 0.8 x v r rated -0.3110 a - 135 1000 junction capacitance c t v r = 200 v - 11 20 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 28 - ns t rr1 t j = 25 c i f = 8.0 a di f /dt = 200 a/s v r = 200 v -6395 t rr2 t j = 125 c - 106 160 peak recovery current i rrm1 t j = 25 c - 4.5 8.0 a i rrm2 t j = 125 c - 6.2 11 reverse recovery charge q rr1 t j = 25 c - 140 380 nc q rr2 t j = 125 c - 335 880 peak rate of fall of recovery current during t b di (rec)m /dt1 t j = 25 c - 133 - a/s di (rec)m /dt2 t j = 125 c - 85 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc --1.7 k/w thermal resistance, junction to ambient r thja typical socket mount - - 40 weight -2.0- g -0.07- oz. marking device case style d 2 pak hfa08tb120s
document number: 94046 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 22-feb-10 3 vs-HFA08TB120SPBF hexfred ? ultrafast soft recovery diode, 8 a vishay high power products fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forwar d current (a) v fm - forwar d voltage drop (v) 0246810 1 100 10 94046_01 t j = 150 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 0 300 900 600 1200 0.01 0.1 1 10 100 1000 94046_02 t j = 125 c t j = 100 c t j = 150 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 10 000 1000 1 100 10 94046_03 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response 94046_04 s ingle pul s e (thermal re s pon s e) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 p dm t 2 t 1 note s : 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94046 4 revision: 22-feb-10 vs-HFA08TB120SPBF vishay high power products hexfred ? ultrafast soft recovery diode, 8 a fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt t rr (ns) d i f / d t (a/s) 100 1000 20 160 40 80 120 60 100 140 94046_05 i f = 8 a i f = 4 a v r = 160 v t j = 125 c t j = 25 c i rr (a) di f /dt (a/s) 100 1000 0 20 16 4 8 12 94046_06 v r = 160 v t j = 125 c t j = 25 c i f = 8 a i f = 4 a q rr (nc) d i f / d t (a/s) 100 1000 0 1200 800 1000 200 400 600 94046_07 v r = 160 v t j = 125 c t j = 25 c i f = 8 a i f = 4 a d i (rec)m / d t (a/s) d i f / d t (a/s) 100 1000 10 1000 100 94046_08 v r = 160 v t j = 125 c t j = 25 c i f = 8 a i f = 4 a
document number: 94046 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 22-feb-10 5 vs-HFA08TB120SPBF hexfred ? ultrafast soft recovery diode, 8 a vishay high power products fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94046 6 revision: 22-feb-10 vs-HFA08TB120SPBF vishay high power products hexfred ? ultrafast soft recovery diode, 8 a ordering information table 2 - hexfred ? family 1 - hpp product suffix 3 - process designator: a = electron irradiated 4 - current rating (08 = 8 a) 5 - package outline (tb = to-220, 2 leads) 6 - voltage rating (120 = 1200 v) 7 - s = d 2 pak - pbf = lead (pb)-free 9 8 - none = tube (50 pieces) trl = tape and reel (left oriented) trr = tape and reel (right oriented) device code 5 1 3 24 6789 vs- hf a 08 tb 120 s trl pbf links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
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